IRF5Y1310CM Datasheet (International Rectifier)

IRF5Y1310CM, Power MOSFET

PD - 94058 HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y1310CM 100V, N-CHANNEL Product Summary Part Number IRF5Y1310CM BVDSS 100V RDS(on) 0.044Ω ID 18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an e

IRF5Y1310CM Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuo