IRF5N5210 Datasheet - International Rectifier

IRF5N5210 Power MOSFET

PD - 94154 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRF5N5210 100V, P-CHANNEL Product Summary Part Number IRF5N5210 BVDSS -100V RDS(on) 0.060Ω ID -31A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme.

IRF5N5210 Features

* n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt

IRF5N5210 Datasheet (118.48 KB)