IRF5N3415 Datasheet (International Rectifier)

IRF5N3415, Power MOSFET

PD - 94267 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRF5N3415 150V, N-CHANNEL Product Summary Part Number IRF5N3415 BVDSS 150V RDS(on) ID 0.042Ω 37.5A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremel

IRF5N3415 Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuo