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F630NS - IRF630NS

Datasheet Summary

Description

Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 4 9 ) 3 .54 (.13 9 ) -A 6.4 7 (.255 ) 6.1 0 (.240 ) -B4 .69 (.1 85 ) 4 .20 (.1 65 ) 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 ) 4 15 .24 (.6 00 ) 14 .84 (.5 84 ) 1.1 5 (.0 45) M IN 1 2 3 L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14 .09 (.5 55 ) 13 .47 (.5 30 ) 4 .0 6 (.16 0 ) 3 .5 5 (.14 0 ) 3X 1.4 0 (.0 55 ) 3X 1.1 5 (.0 45 ) 2 .5 4 (.1 00) 2X N O TE S : 0 .93 (.03 7 ) 0 .69 (.02 7 ) M B A M 3X 0.5 5 (.0 22) 0.4 6 (.0 18) 0 .3 6 (.0 1 4) 2 .92 (.11 5 ) 2 .64 (.

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    www.DataSheet4U.com PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l l HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.30Ω G S Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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