F630 - 9A 200V N-channel Enhancement Mode Power MOSFET

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤0.4Ω).
Low Gate Charge(Typical Data:22nC).
Low Reverse Transfer Capacitances(Typical:22pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

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F630 9a 200v n-channel enhancement mode power mosfet by ROUM - Datasheet Preview

Datasheet Details

Part number	F630
Manufacturer	ROUM
File Size	1.32 MB
Description	9A 200V N-channel Enhancement Mode Power MOSFET
Datasheet	F630 Datasheet

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630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 200V RDS(on) （TYP)= 0.34Ω ID = 9A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤0.4Ω) ● Low Gate Charge(Typical Data:22nC) ● Low Reverse Transfer Capacitances(Typical:22pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● High efficiency switch mode power supplies. ● Electronic lamp ballasts based on half bridge. ● UPS ● Inverter TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.