Datasheet Details
- Part number
- F630
- Manufacturer
- ROUM
- File Size
- 1.32 MB
- Datasheet
- F630-ROUM.pdf
- Description
- 9A 200V N-channel Enhancement Mode Power MOSFET
F630 Description
630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance.
F630 Features
* Fast Switching
* Low ON Resistance(Rdson≤0.4Ω)
* Low Gate Charge(Typical Data:22nC)
* Low Reverse Transfer Capacitances(Typical:22pF)
* 100% Single Pulse Avalanche Energy Test
F630 Applications
* High efficiency switch mode power supplies.
* Electronic lamp ballasts based on half bridge.
* UPS
* Inverter
TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Value
630/I630/
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