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CPV364MU - IGBT SIP MODULE Ultra-Fast IGBT

Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM.

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Previous Datasheet Index Next Data Sheet PD - 5.025A CPV364MU IGBT SIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 1 Ultra-Fast IGBT D3 15 3 Q5 D5 16 D6 10 Q6 Product Summary 7 13 19 Output Current in a Typical 20 kHz Motor Drive 5.4 ARMS per phase (1.7 kW total) with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules.
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