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CPV364M4KPBF - IGBT SIP MODULE

Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Isolated Metal Substrate) Power Modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Features

  • 3 Q1 D1 9 4 D2 12 Q3 D3 15 10 D4 18 Q5 D5 16 6 Q2 Q4 Q6 D6 7 13 19 Product Summary Output Current in a Typical 20 kHz Motor Drive 11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1).

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
CPV364M4K IGBT SIP MODULE
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Full PDF Text Transcription

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Bulletin I-27256 09/06 CPV364M4KPbF IGBT SIP MODULE • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10μs @ 125°C, VGE = 15V • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) • Totally Lead-Free and RoHs Compliant Short Circuit Rated UltraFast IGBT 1 Features 3 Q1 D1 9 4 D2 12 Q3 D3 15 10 D4 18 Q5 D5 16 6 Q2 Q4 Q6 D6 7 13 19 Product Summary Output Current in a Typical 20 kHz Motor Drive 11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.
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