AUIRLR014N HEXFET Power MOSFET

International Rectifier

Description

AUTOMOTIVEGRADE PD - 97740 * Advanced Planar Technology * Logic-Level Gate Drive * Low On-Resistance * Dynamic dV/dT.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

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Datasheet Specifications

Part number: AUIRLR014N
Manufacturer: International Rectifier
File Size: 211.15 KB
Datasheet: AUIRLR014N-InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* g TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 10 V QGS VG QG QGD Charge Fig 13a. Basic Gate Charge Waveform www. irf. com Current Regulator Same Type as D. U. T. 50K 12V .2F .3F D. U. T. + -VDS VGS 3mA I

Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

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AUIRLR014N HEXFET Power MOSFET International Rectifier

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