Datasheet Details
- Part number
- AUIRLR2703
- Manufacturer
- International Rectifier
- File Size
- 267.07 KB
- Datasheet
- AUIRLR2703-InternationalRectifier.pdf
- Description
- Power MOSFET
AUIRLR2703 Description
AUTOMOTIVEGRADE PD - 97620 AUIRLR2703 * Advanced Planar Technology * Logic-Level Gate Drive * Low On-Resistance * Dy.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.
AUIRLR2703 Features
* nclamped Inductive Test Circuit
V(BR)DSS tp
EAS , Single Pulse Avalanche Energy (mJ)
160 I D
TOP
5.7A
9.9A
BOTTOM 14A
120
80
40
0 VDD = 15V
A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped In
AUIRLR2703 Applications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme
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