Datasheet Specifications
- Part number
- AUIRLR2703
- Manufacturer
- International Rectifier
- File Size
- 267.07 KB
- Datasheet
- AUIRLR2703-InternationalRectifier.pdf
- Description
- Power MOSFET
Description
AUTOMOTIVEGRADE PD - 97620 AUIRLR2703 * Advanced Planar Technology * Logic-Level Gate Drive * Low On-Resistance * Dy.
Features
* nclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 160 I D TOP 5.7A 9.9A BOTTOM 14A 120 80 40 0 VDD = 15V A 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped InApplications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremeAUIRLR2703 Distributors
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