Datasheet4U Logo Datasheet4U.com

AUIRLR024N - Power MOSFET

AUIRLR024N Description

  AUTOMOTIVE GRADE .
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

AUIRLR024N Features

* Advanced Planar Technology
* Low On-Resistance
* Logic-Level Gate Drive
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Qualifie

AUIRLR024N Applications

* this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

📥 Download Datasheet

Preview of AUIRLR024N PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • AUIRLR2703 - Power MOSFET (International Rectifier)
  • AUIRLR2905Z - Power MOSFET (International Rectifier)
  • AUIRLR2908 - HEXFET Power MOSFET (International Rectifier)
  • AUIRLR3105 - Power MOSFET (International Rectifier)
  • AUIRLR3110Z - Power MOSFET (International Rectifier)
  • AUIRLR3636 - HEXFET Power MOSFET (International Rectifier)
  • AUIRLR3705Z - Power MOSFET (International Rectifier)
  • AUIRLR3915 - HEXFET Power MOSFET (International Rectifier)

📌 All Tags

Infineon AUIRLR024N-like datasheet