2N7599T3 Datasheet (International Rectifier) - RADIATION HARDENED POWER MOSFET

2N7599T3, RADIATION HARDENED POWER MOSFET

PD-95837B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 2N7599T3 IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHY67C30CM 100K Rads (Si) IRHY63C30CM 300K Rads (Si) RDS(on) 3.0Ω 3.0Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides superior power MOSFETs for space applications.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to

2N7599T3 Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings