2N7588T3 Datasheet (International Rectifier) - RADIATION HARDENED POWER MOSFET

2N7588T3, RADIATION HARDENED POWER MOSFET

PD-96986A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) 2N7588T3 IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67130CM 100K Rads (Si) IRHYS63130CM 300K Rads (Si) RDS(on) 0.042Ω 0.042Ω ID 20A 20A International Rectifier’s R6TM technology provides superior power MOSFETs for space applications.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear En

2N7588T3 Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C Continuous Dra