2N7592T3 Datasheet (International Rectifier) - RADIATION HARDENED POWER MOSFET

2N7592T3, RADIATION HARDENED POWER MOSFET

PD-96925C RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) 2N7592T3 IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67230CM 100K Rads (Si) IRHYS63230CM 300K Rads (Si) RDS(on) 0.13Ω 0.13Ω ID 16A 16A International Rectifier’s R6TM technology provides superior power MOSFETs for space applications.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfe

2N7592T3 Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°