IS41C85120 512K x 8 (4-MBIT) DYNAMIC RAM

Integrated Silicon Solution

Description

IS41C85120 IS41LV85120 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.datasheet4u.com ISSI .
® PRELIMINARY INFORMATION SEPTEMBER 2001 FEATURES. TTL compatible inputs and outputs. Refresh Interval: 1024 cycles/16 ms.

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Datasheet Specifications

Part number: IS41C85120
Manufacturer: Integrated Silicon Solution
File Size: 190.69 KB
Datasheet: IS41C85120_IntegratedSiliconSolution.pdf
Description: 512K x 8 (4-MBIT) DYNAMIC RAM

Features

* TTL compatible inputs and outputs
* Refresh Interval: 1024 cycles/16 ms
* Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
* JEDEC standard pinout
* Single power supply 5V ± 10% (IS41C85120) 3.3V ± 10% (IS41LV85120)
* Industrail Temperature

Applications

* The IS41C85120 and IS41LV85120 are available in a 28-pin, 400-mil SOJ package. KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. Fast Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -35 35 10 18 12 60 -60

IS41C85120 Distributors

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IS41C85120 512K 4-MBIT DYNAMIC RAM Integrated Silicon Solution

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