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IS41C16100, IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41C16100 Description

IS41C16100 IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .
The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.

IS41C16100 Features

* TTL compatible inputs and outputs; tristate I/O
* Refresh Interval:
* Auto refresh Mode: 1,024 cycles /16 ms
* RAS-Only, CAS-before-RAS (CBR), and Hidden
* Self refresh Mode - 1,024 cycles / 128ms
* JEDEC standard pinout
* Single power supply

IS41C16100 Applications

* The IS41C16100 and IS41LV16100 are packaged in a 42-pin 400mil SOJ and 400-mil 50- (44-) pin TSOP (Type II). The lead-free 400mil 50- (44-) option is available too. KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. ED

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IS41C16100, IS41LV16100. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IS41C16100, IS41LV16100
Manufacturer
Integrated Silicon Solution
File Size
207.40 KB
Datasheet
IS41LV16100_IntegratedSiliconSolution.pdf
Description
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Note
This datasheet PDF includes multiple part numbers: IS41C16100, IS41LV16100.
Please refer to the document for exact specifications by model.

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16-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution
Integrated Silicon Solution IS41C16100-like datasheet