Description
IS41C16100S IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .
The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x
16-bit high-performance CMOS Dynamic Random Access Memories.
Features
* Extended Data-Out (EDO) Page Mode access cycle
* TTL compatible inputs and outputs; tristate I/O
* Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms
* JEDEC standard pinout
Applications
* The IS41C16100S and IS41LV16100S are packaged in a 42-pin 400mil SOJ and 400mil 50- (44-) pin TSOP-2.
EY TIMING PARAMETERS
Parameter
Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. EDO Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -4