Datasheet Details
- Part number
- ITCH27100B2
- Manufacturer
- Innogration
- File Size
- 921.46 KB
- Datasheet
- ITCH27100B2-Innogration.pdf
- Description
- High Power RF LDMOS FET
ITCH27100B2 Description
Innogration (Suzhou) Co., Ltd.Document Number: ITCH27100B2 Preliminary Datasheet V1.0 2500MHz-2700MHz, 100W, 28V High Power RF LDMOS FETs Descript.
The ITCH27100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.
ITCH27100B2 Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant
Table
ITCH27100B2 Applications
* with frequencies from 2500 to 2700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH27100B2
* Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10%
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