ITCH20160B2 Datasheet (Innogration) - High Power RF LDMOS FET

ITCH20160B2, High Power RF LDMOS FET

The ITCH20160B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITCH20160B2 *Typ

ITCH20160B2 Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positiv