PTFA261702E - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTFA261702E
Manufacturer	Infineon
File Size	359.92 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA261702E-Infineon.pdf

The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band.

include input and output matching, and thermally-enhanced package with slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Efficiency (%) EVM (dBc) WiMAX Performance VDD = 28 V, IDQ = 1800 mA, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) 30 -15 Efficiency 25 EVM: ƒ = 2.62 GHz 20 EVM: ƒ = 2.68 GHz EVM: ƒ = 2.65 GHz 15 -20 -25 -30 10 -35 5 -40 0 20 25 30 35 40 45 Outp.

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Published: Feb 21, 2016 |