PTFA260451E - Thermally-Enhanced High Power RF LDMOS FET

Name: PTFA260451E
SKU: PTFA260451E-968746

Infineon

📥 Download Datasheet

PTFA260451E Datasheet Preview — Preview of PTFA260451E PDF

Datasheet Details

Part number	PTFA260451E
Manufacturer	Infineon
File Size	215.35 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA260451E-Infineon.pdf

PTFA260451E Product details

Description

The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS ® FET intended for CDMA2000, Super3G (3GPP TSG RAN), and WiMAX applications from 2.62 to 2.68 GHz.

Features

Lead-free, RoHS-compliant and thermallyenhanced packaging.
Internal matching for wideband performance.
Typical three-carrier CDMA2000 performance - Average output power = 10 W - Gain = 14 dB - Efficiency = 24% - ACPR =.
52 dBc.
Typical CW performance - Output power at P.
1dB = 50 W - Efficiency = 46%.
Integrated ESD protection: Human Body Model, Class 2 (minimum).
Excellent thermal stability.
Low HCI Drift.
C.

📁 PTFA260451E Similar Datasheet

PTFA220121M - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
PTFA - Plug Type Fixed Attenuator (OPLINK)
PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)

Other Datasheets by Infineon

PTFA260851E - Thermally-Enhanced High Power RF LDMOS FET
PTFA260851F - Thermally-Enhanced High Power RF LDMOS FET
PTFA261301E - Thermally-Enhanced High Power RF LDMOS FET
PTFA261301F - Thermally-Enhanced High Power RF LDMOS FET
PTFA261702E - Thermally-Enhanced High Power RF LDMOS FET
PTFA210301E - Thermally-Enhanced High Power RF LDMOS FET

Published: Feb 21, 2016 |