PTFA220081M - High Power RF LDMOS Field Effect Transistor

Infineon

Datasheet Details

Part number	PTFA220081M
Manufacturer	Infineon
File Size	734.80 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PTFA220081M-Infineon.pdf

The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz.

Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR =.
40 dBc.
Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Efficiency = 59% - Gain = 20 dB.
Typical CW performance, 2140 MHz, 28 V - POUT = 40 dBm - Efficiency = 50% - Gain = 15 dB.
Capable of handling 10:1 VSWR @ 28 V, 8 W (CW) output power.
Integrated ESD protection : Human Body Model, Class 2 (minimum).
Excellent thermal stability.
P.

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Published: Feb 21, 2016 |