PTFA220081M Datasheet (Infineon) - High Power RF LDMOS Field Effect Transistor

PTFA220081M, High Power RF LDMOS Field Effect Transistor

The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz.

This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

PTFA220081M Package PG-SON-10 IMD (dBc) Effic

PTFA220081M Features

* Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR =

* 40 dBc

* Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Efficiency = 59% - Gain = 20 dB

* Typical CW performance, 2140 MHz, 28 V - POUT = 40 dBm - Efficiency = 50% - Gain = 15