PTFA220041M Datasheet (Infineon) - High Power RF LDMOS Field Effect Transistor

PTFA220041M, High Power RF LDMOS Field Effect Transistor

The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range.

This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package.

PTFA220041M Package PG-SON-10 Gain (dB) Effic

PTFA220041M Features

* Typical two-carrier WCDMA performance, 1842 MHz, 8 dB PAR - POUT = 27 dBm Avg - ACPR =

* 44 dBc

* Typical CW performance, 1842 MHz, 28 V - POUT = 37 dBm - Efficiency = 53.5% - Gain = 17.9 dB

* Typical CW performance, 940 MHz, 28 V - POUT = 37.5 dBm - Efficiency = 57%