PTFA220041M - High Power RF LDMOS Field Effect Transistor

Infineon

Datasheet Details

Part number	PTFA220041M
Manufacturer	Infineon
File Size	323.98 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PTFA220041M-Infineon.pdf

The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range.

Typical two-carrier WCDMA performance, 1842 MHz, 8 dB PAR - POUT = 27 dBm Avg - ACPR =.
44 dBc.
Typical CW performance, 1842 MHz, 28 V - POUT = 37 dBm - Efficiency = 53.5% - Gain = 17.9 dB.
Typical CW performance, 940 MHz, 28 V - POUT = 37.5 dBm - Efficiency = 57% - Gain = 19.7 dB.
Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power.
In.

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Published: Feb 21, 2016 |