Datasheet Specifications
- Part number
- PTFA091503EL
- Manufacturer
- Infineon ↗
- File Size
- 544.60 KB
- Datasheet
- PTFA091503EL_Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FETs
Description
PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 * 960 MHz .
Features
* internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA091503EL Package H-33288-6 Features VDD = 30 V, IDQ = 1250 mA, ƒ = 960 MHz, 3GPP WCDMA signPTFA091503EL Distributors
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