PTFA091201HL, PTFA091201GL Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Description

PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 * 960 MHz Descri.
The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.

📥 Download Datasheet

PTFA091201HL Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFA091201HL, PTFA091201GL. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTFA091201HL, PTFA091201GL
Manufacturer: Infineon ↗
File Size: 308.71 KB
Datasheet: PTFA091201GL_Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FETs
Note: This datasheet PDF includes multiple part numbers: PTFA091201HL, PTFA091201GL.
Please refer to the document for exact specifications by model.

Features

* include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248

PTFA091201HL Distributors

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PTFA091201GL Thermally-Enhanced High Power LDMOS FETs Infineon

Infineon PTFA091201HL-like datasheet