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PTAC240502FC - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band.

Features

  • include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, VGS1 = 2.6 V, VGS2 = 1.3 V, ƒ = 2400 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 16 60 15 Gain 14 50 40 13 Efficiency 12 30 20 11 10 10 26 pt.

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Datasheet Details

Part number PTAC240502FC
Manufacturer Infineon
File Size 446.96 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTAC240502FC Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, VGS1 = 2.6 V, VGS2 = 1.3 V, ƒ = 2400 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
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