• Part: PTA10N80
  • Description: 800V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: PIP
  • Size: 867.86 KB
Download PTA10N80 Datasheet PDF
PIP
PTA10N80
Features - Proprietary New Planar Technology - RDS(ON),typ.=1.0 Ω@VGS=10V - Low Gate Charge Minimize Switching Loss - Fast Recovery Body Diode BVDSS 800V PTP10N80 PTA10N80 RDS(ON),typ. 1.0Ω ID 10A Applications - ATX Power - LCD Panel Power Ordering Information Part Number Package PTP10N80 TO-220 TO-220F Brand TO-220 TO-220F Package Not to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGSS ID ID @ Tc =100℃ IDM EAS dv/dt TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds PTP10N80 PTA10N80 ±30 Figure 3 Figure...