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PTAC240502FC - Thermally-Enhanced High Power RF LDMOS FET

Description

t power amplifier applications in the 2300 to 2400 MHz frequency band.

Features

  • include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with u Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) od Two-carrier WCDMA Drive-up r VDD = 28 V, IDQ = 120 mA, VGS1 = 1.3 V, VGS2 = 2.6 V, ƒ = 2400 MHz, 3GPP WCDMA p signal, PAR = 8 dB, 10 MHz carrier spacing, 16 BW 3.84 MHz 60 d 15 50 e Gain u 14 40 in 13 30 t 12 Effi.

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Datasheet Details

Part number PTAC240502FC
Manufacturer Wolfspeed
File Size 728.46 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTAC240502FC Datasheet
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PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular t power amplifier applications in the 2300 to 2400 MHz frequency band. c Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with u Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) od Two-carrier WCDMA Drive-up r VDD = 28 V, IDQ = 120 mA, VGS1 = 1.3 V, VGS2 = 2.6 V, ƒ = 2400 MHz, 3GPP WCDMA p signal, PAR = 8 dB, 10 MHz carrier spacing, 16 BW 3.
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