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ISC151N20NM6 200V MOSFET

ISC151N20NM6 Description

ISC151N20NM6 MOSFET OptiMOSTM 6 Power-Transistor, 200 V .

ISC151N20NM6 Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* 175°C operating temperature
* Pb-free lead plating; RoHS compliant
* Halogen-free according to

ISC151N20NM6 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 200 V RDS(on),max 15.1 mΩ ID 74 A Qoss 95 nC QG 31 nC Qrr 235 nC Type / Ordering Code ISC151N20NM6 Package PG-TDSON-8 FL TDSON-8 FL (enlarged source interconnection) 8 7 65 1 2 3 4 4 3 2 1 5 67 8 Drain Pin 5-

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