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ISC130N20NM6 200V MOSFET

ISC130N20NM6 Description

ISC130N20NM6 MOSFET OptiMOSTM 6 Power-Transistor, 200 V .

ISC130N20NM6 Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* 175°C operating temperature
* Pb-free lead plating; RoHS compliant
* Halogen-free according to

ISC130N20NM6 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 200 V RDS(on),max 13.0 mΩ ID 88 A Qoss 122 nC QG 39 nC Qrr 272 nC Type / Ordering Code ISC130N20NM6 Package PG-TSON-8 PG-TSON-8-3 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate
* 1 Pin 4 So

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