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IQE046N08LM5CGSC 80V Power Transistor

IQE046N08LM5CGSC Description

Public IQE046N08LM5CGSC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 80 V .
1 Maxi.

IQE046N08LM5CGSC Features

* Optimized for high performance SMPS, e. g. synchronous rectification
* N‑channel, logic level
* Very low on‑resistance RDS(on)
* Superior thermal resistance
* 100% avalanche tested
* Pb‑free lead plating; RoHS compliant
* Halogen‑free accordin

IQE046N08LM5CGSC Applications

* Table 1 Key performance parameters Parameter Value Unit VDS 80 V RDS(on),max@10V 4.6 mΩ RDS(on),max@4.5V 5.9 mΩ ID 99 A Qoss 39 nC QG (0V4.5V) 19 nC PG‑WHTFN‑9 (3x3) Pin 1 2 3 4 5 678 9 43 2 1 Drain Pin 5-8, tab Gate
* 1 Pin 9 Source Pin 1-4
* 1: Internal body dio

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