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IPA057N08N3 - MOSFET

Download the IPA057N08N3 datasheet PDF. This datasheet also covers the IPA057N08N3G variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM).
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPA057N08N3G_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPA057N08N3 N-Channel MOSFET INCHANGE
IPA057N08N3G MOSFET Infineon Technologies
IPA057N06N3 N-Channel MOSFET INCHANGE
IPA028N08N3G Power-Transistor Infineon Technologies
IPA029N06N N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPA057N06N3G Power-Transistor
IPA029N06N MOSFET
IPA030N10N3 Power-Transistor
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IPA032N06N3G Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,80V OptiMOS™3Power-Transistor IPA057N08N3G DataSheet Rev.2.2 Final PowerManagement&Multimarket OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 • Fully isolated package (2500 VAC; 1 minute) Type IPA057N08N3 G IPA057N08N3 G Product Summary VDS RDS(on),max ID 80 V 5.
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