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IMBG65R007M2H - MOSFET

Infineon

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Datasheet Details

Part number	IMBG65R007M2H
Manufacturer	Infineon
File Size	1.60 MB
Description	MOSFET
Datasheet	IMBG65R007M2H-Infineon.pdf

IMBG65R007M2H Product details

Description

. . .

Features

Ultra-low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.5 V.
Robust against parasitic turn-on even with 0 V turn-off gate voltage.
Flexible driving voltage and compatible with bipolar driving scheme.
Robust body diode operation under hard commutation events.
. XT interconnection technology for best-in-class thermal performance Benefits.
Enables high efficiency and high power density designs.
Facilitates gre.

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Published: Apr 1, 2024 |