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IMBG65R010M2H - 650V SiC MOSFET

Description

1 Maximum ratings 3 T

Features

  • Ultra‑low switching losses.
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V.
  • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage.
  • Flexible driving voltage and compatible with bipolar driving scheme.
  • Robust body diode operation under hard commutation events.
  • . XT interconnection technology for best‑in‑class thermal performance Benefits.
  • Enables high efficiency and high power density designs.
  • Facilitates gre.

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Full PDF Text Transcription

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Public IMBG65R010M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs. Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • .
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