• Part: IMBG65R033M2H
  • Description: 650V SiC MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 1.37 MB
Download IMBG65R033M2H Datasheet PDF
Infineon
IMBG65R033M2H
Features - Ultra‑low switching losses - Benchmark gate threshold voltage, VGS(th) = 4.5 V - Robust against parasitic turn‑on even with 0 V turn‑off gate voltage - Flexible driving voltage and patible with bipolar driving scheme - Robust body diode operation under hard mutation events - .XT interconnection technology for best‑in‑class thermal performance Benefits - Enables high efficiency and high power density designs - Facilitates great ease of use and integration - Provides the best price performance ratio pared to Industry’s most ambitious roadmaps - Reduces the size, weight and bill of materials of the systems - Enhances system robustness and reliability Potential applications - SMPS - Solar PV inverters - Energy storage and battery formation - UPS - EV charging infrastructure - Motor drives Product validation Fully qualified according to JEDEC for Industrial Applications Please note: The source and driver source pins are not exchangeable. Their exchange might lead to...