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IKWH70N65WR6 - IGBT

Description

C Copyright © Infineon T Type IKWH70N65WR6 G E Package PG-TO247-3-STD-NN4.8 Marking H70EWR6 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-12-06 IKWH70N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepag

Features

  • VCE = 650 V.
  • IC = 70 A.
  • Pin-to-pin creepage distance > 4.8 mm.
  • Pin-to-pin clearance distance > 3.4 mm.
  • Monolithic diode optimized for PFC and welding.

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Full PDF Text Transcription (Reference)

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IKWH70N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package offers improved reliability against package contamination Features • VCE = 650 V • IC = 70 A • Pin-to-pin creepage distance > 4.8 mm • Pin-to-pin clearance distance > 3.4 mm • Monolithic diode optimized for PFC and welding applications • Stable temperature behavior • Very low VCEsat and low Eoff • Easy parallel switching capability based on positive temperature coefficient of VCEsat • Low temperature dependence of VCEsat and Esw • Product spectrum and PSpice Models: http://www.infineon.
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