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IKWH50N65EH7 - IGBT

Description

C Type IKWH50N65EH7 G E Package PG-TO247-3-STD-NN4.8 Marking K50EEH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-27 IKWH50N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology

Features

  • VCE = 650 V.
  • IC = 50 A.
  • Low switching losses.
  • Very low collector-emitter saturation voltage VCEsat.
  • Very soft, fast recovery antiparallel diode.
  • Smooth switching behavior.
  • Humidity robustness.
  • Optimized for hard switching, two- and three-level topologies.
  • Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ Potential.

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Datasheet Details

Part number IKWH50N65EH7
Manufacturer Infineon
File Size 2.01 MB
Description IGBT
Datasheet download datasheet IKWH50N65EH7 Datasheet
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IKWH50N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode Features • VCE = 650 V • IC = 50 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete product spectrum and PSpice Models: http://www.infineon.
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