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IKWH30N67PR7 - IGBT

Description

C Copyright © Infineon T Type IKWH30N67PR7 G E Package PG-TO247-3-U04 Marking H30EPR7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2024-09-23 IKWH30N67PR7 TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for bo

Features

  • VCE = 670 V.
  • IC = 30 A.
  • Pin-to-pin creepage distance > 4.8 mm.
  • Pin-to-pin clearance distance > 3.4 mm.
  • Optimized monolithic diode for PFC.

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Datasheet Details

Part number IKWH30N67PR7
Manufacturer Infineon
File Size 1.35 MB
Description IGBT
Datasheet download datasheet IKWH30N67PR7 Datasheet
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IKWH30N67PR7 TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage Final datasheet TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage with improved EMI characteristics offering the best-in-class performance for high power and high switching frequency applications Features • VCE = 670 V • IC = 30 A • Pin-to-pin creepage distance > 4.8 mm • Pin-to-pin clearance distance > 3.4 mm • Optimized monolithic diode for PFC applications • Improved EMI behavior with lower dv/dt • Very low VCEsat = 1.4 V (typ.) at 25°C • Stable temperature behavior • Low temperature dependence of VCEsat and Esw • 2 kV ESD HBM compliant • Easy parallel switching capability based on positive temperature coefficient of VCEsat • Product spectrum and PSpice Models: http://www.infineon.
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