Datasheet4U Logo Datasheet4U.com

IDWD100E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode

IDWD100E120D7 Description

IDWD100E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Final datasheet Soft and ultra-fast recovery 1200 V Emitter controlled 7.
Pin definition:. Pin 1 and backside - Cathode. Pin 2 - Anode 1 CASE 2 Type IDWD100E120D7 Package PG-TO247-2-STD-NA8.

IDWD100E120D7 Features

* VRRM = 1200 V
* IF = 100 A
* 1200 V emitter controlled technology
* Maximum junction temperature Tvjmax = 175°C
* Low forward voltage (VF)
* Low reverse recovery charge
* Ultrafast recovery times
* Soft recovery characteristics

📥 Download Datasheet

Preview of IDWD100E120D7 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IDWD100E120D7
Manufacturer
Infineon ↗
File Size
1.16 MB
Datasheet
IDWD100E120D7-Infineon.pdf
Description
Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode

📁 Related Datasheet

  • IDW100E60 - Fast Switching Emitter Controlled Diode (Infineon Technologies)
  • IDW10G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
  • IDW12G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
  • IDW16G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
  • IDW20G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
  • IDW30G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
  • IDW40E65D1 - Diode (Infineon Technologies)
  • IDW40G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)

📌 All Tags

Soft and ultra-fast recovery 1200 Emitter controlled diode Infineon
Infineon IDWD100E120D7-like datasheet