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IDC40D120T6H - Diode

Description

Attention please!

Features

  • 1200V EMCON 4 technology.
  • soft, fast switching This chip is used for:.
  • medium / high power modules A.
  • low reverse recovery charge.
  • small temperature coefficient C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IDC40D120T6H Diode EMCON 4 High Power Chip FEATURES: • 1200V EMCON 4 technology • soft, fast switching This chip is used for: • medium / high power modules A • low reverse recovery charge • small temperature coefficient C Applications: • medium / high power drives Chip Type IDC40D120T6H VR IF 1200V 75A Die Size 6.30 x 6.30 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Pad metall Backside metall Die bond Wire bond Reject ink dot size Recommended storage environment 6.30 x 6.30 39.69 / 29.98 mm2 5.346 x 5.
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