CY15B108QN Datasheet (Infineon) - LP Ferroelectric RAM

CY15B108QN, LP Ferroelectric RAM

Functional description The EXCELON™ LP CY15X108QN is a low power, 8-Mb non-volatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM.

It provides reliable data retention for 151 years whi

CY15B108QN Features

* 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced high-relia