BGA10H1MN9 - High-band Low Noise Amplifier

Infineon

📥 Download Datasheet

BGA10H1MN9 Datasheet Preview — Preview of BGA10H1MN9 PDF

Datasheet Details

Part number	BGA10H1MN9
Manufacturer	Infineon
File Size	967.05 KB
Description	High-band Low Noise Amplifier
Datasheet	BGA10H1MN9-Infineon.pdf

BGA10H1MN9 Product details

Description

2 3 Absolute Maximum Ratings 3 4 DC Characteristics 4 5 RF Characteristics 4 6 MIPI RFFE Specification 7 7 Application Information 17 8 Package Information 19 Disclaimer 25 Datasheet 1 Revision 2.0 2023-07-31 BGA10H1MN9 High-Band Low Noise Amplifier with Gain Steps and MIPI Control Product Description 1

Features

Operating frequencies: 2.3 - 2.7 GHz.
Insertion power gain: 19.7 dB.
Low noise figure: 0.8 dB.
Low current consumption: 6.0 mA.
Support of 1.2 V and 1.8 V VDD/VIO.
Integrated DC block capacitors at input and output.
MIPI RFFE 3.0 1.1 x 1.1 mm2 Potential.

📁 BGA10H1MN9 Similar Datasheet

BGA2001 - Silicon MMIC amplifier (NXP)
BGA2003 - Silicon MMIC amplifier (NXP)
BGA2012 - 1900 MHz high linear low noise amplifier (NXP)
BGA2022 - MMIC mixer (NXP)
BGA2031 - MMIC variable gain amplifier (NXP)
BGA2031-1 - MMIC variable gain amplifier (NXP)
BGA24 - 8-bit ECC NAND flash (XTX)
BGA2709 - MMIC wideband amplifier (NXP)

Other Datasheets by Infineon

BGA123L4 - Small Footprint Ultra Low Current Low Noise Amplifier
BGA123N6 - Ultra Low Current Low Noise Amplifier
BGA125N6 - Ultra Low Current Low Noise Amplifier
BGA231N7 - Silicon Germanium GNSS Low Noise Amplifier
BGA524N6 - Silicon Germanium Low Noise Amplifier
BGA525N6 - broadband Low Power LNA

Published: May 11, 2025 |