BFP640FESD Datasheet - Infineon

BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor

and information available in the data sheet has been expanded and updated. Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™.

BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any informat.

BFP640FESD Datasheet (1.16 MB)

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Datasheet Details

Part number:

BFP640FESD

Manufacturer:

Infineon ↗

File Size:

1.16 MB

Description:

Robust low noise silicon germanium bipolar rf transistor.

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BFP640FESD Robust Low Noise Silicon Germanium Bipolar Transistor Infineon

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