BFP640FESD Datasheet (Infineon) - Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP640FESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor

and information available in the data sheet has been expanded and updated.

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BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.

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