Datasheet Details
| Part number | BFP640 |
|---|---|
| Manufacturer | Infineon Technologies AG |
| File Size | 429.78 KB |
| Description | Surface mount high linearity silicon NPN RF bipolar transistor |
| Datasheet |
 BFP640_InfineonTechnologiesAG.pdf
|
| Part number | BFP640 |
|---|---|
| Manufacturer | Infineon Technologies AG |
| File Size | 429.78 KB |
| Description | Surface mount high linearity silicon NPN RF bipolar transistor |
| Datasheet |
BFP640_InfineonTechnologiesAG.pdf
|
The BFP640 is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family.42 GHz and high linearity characteristics at low currents mItsatkreanthsiistidoenvfirceeqpuaerntcicyuflTaorlfy suitable for energy efficiency designs at frequency as high as 8 GHz.It remains cost competitive without compromising on ease of use.Feature list Minimum noise figure NFmin = 0.65 dB at 1.9 GHz, 3 V, 6 mA High gain Gma =
📁 BFP640 Similar Datasheet