Datasheet Details
| Part number | BFP620F |
|---|---|
| Manufacturer | Infineon Technologies AG |
| File Size | 315.94 KB |
| Description | Low profile high gain silicon NPN RF bipolar transistor |
| Datasheet |
 BFP620F_InfineonTechnologiesAG.pdf
|
| Part number | BFP620F |
|---|---|
| Manufacturer | Infineon Technologies AG |
| File Size | 315.94 KB |
| Description | Low profile high gain silicon NPN RF bipolar transistor |
| Datasheet |
BFP620F_InfineonTechnologiesAG.pdf
|
The BFP620F is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Minimum noise figure NFmin = 0.7 dB at 1.8 GHz, 1.5 V, 5 mA High gain Gms = 21 dB at 1.8 GHz, 1.5 V, 50 mA OIP3 = 25 dBm at 1.8 GHz, 2 V, 50 mA Pro
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