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IPG20N10S4L-22 - Power-Transistor

Features

  • Dual N-channel Logic Level - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPG20N10S4L-22 Product Summary VDS RDS(on),max4) ID 100 V 22 mΩ 20 A PG-TDSON-8-4 Type IPG20N10S4L-22 Package Marking PG-TDSON-8-4 4N10L22 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current on.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPG20N10S4L-22 Product Summary VDS RDS(on),max4) ID 100 V 22 mΩ 20 A PG-TDSON-8-4 Type IPG20N10S4L-22 Package Marking PG-TDSON-8-4 4N10L22 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) one channel active I D,pulse - Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage E AS I AS V GS I D=10A - Power dissipation one channel active P tot T C=25°C Operating and s
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