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OptiMOS™-T2 Power-Transistor
Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested
IPG16N10S4-61
Product Summary VDS RDS(on),max3) ID
100 V 61 mW 16 A
PG-TDSON-8
87 65
12 34
87
65
Type IPG16N10S4-61
Package PG-TDSON-8
Marking 4N1061
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
ID
T C=25 °C, V GS=10 V
Pulsed drain current1) one channel active
Avalanche energy, single pulse1, 3) Avalanche current, single pulse3) Gate source voltage
Power dissipation one channel active
T C=100 °C, V GS=10 V1)
I D,pulse -
E AS I AS V GS
I D=8A -
P tot
T C=25 °C
Operating and st
IPG16N10S4-61 Datasheet
