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IPG20N10S4-36A - Power-Transistor

Features

  • Dual N-channel Normal Level - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested.
  • Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max4) ID 100 V 36 mW 20 A PG-TDSON-8-10 Type IPG20N10S4-36A Package PG-TDSON-8-10 Marking 4N1036 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symb.

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IPG20N10S4-36A OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max4) ID 100 V 36 mW 20 A PG-TDSON-8-10 Type IPG20N10S4-36A Package PG-TDSON-8-10 Marking 4N1036 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V2) I D,pulse - E AS
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