IDH09SG60C - Schottky Diode

Infineon Technologies

IDH09SG60C Description

IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode .

IDH09SG60C Features

* Revolutionary semiconductor material - Silicon Carbide
* Switching behavior benchmark
* No reverse recovery / No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant

IDH09SG60C Applications

* Breakdown voltage tested at 20mA2)
* Optimized for high temperature operation www. DataSheet4U. net
* Lowest Figure Product Summary V DC QC I F; T C< 130 °C 600 15 9 V nC A of Merit QC/IF thinQ! 3G Diode designed for fast switching applications like:
* SMPS e. g. ; C

📥 Download Datasheet

IDH09SG60C Datasheet Preview — Preview of IDH09SG60C PDF

Datasheet Details

Part number: IDH09SG60C
Manufacturer: Infineon ↗ Technologies
File Size: 250.86 KB
Datasheet: IDH09SG60C_InfineonTechnologies.pdf
Description: Schottky Diode

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Schottky Diode Infineon Technologies

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