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IDH05G120C5 - Silicon Carbide Schottky Diode

IDH05G120C5 Description

Diode Silicon Carbide Schottky Diode IDH05G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev.2.1 2017-07-21 Industrial Powe.
2 Table of Contents3 Maximum Ratings 4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics Diagram 6 Package Drawings 9 Revis.

IDH05G120C5 Features

* Revolutionary semiconductor material - Silicon Carbide
* No reverse recovery current / No forward recovery
* Temperature independent switching behavior
* Low forward voltage even at high operating temperature
* Tight forward voltage distribution
* Excellent thermal perform

IDH05G120C5 Applications

* Pb-free lead plating; RoHS compliant Benefits
* System efficiency improvement over Si diodes
* Enabling higher frequency / increased power density solutions
* System size / cost savings due to reduced heatsink requirements and smaller magnetics
* Reduced EMI
* Highest effic

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Silicon Carbide Schottky Diode Infineon
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