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IDH02SG120 - Schottky Diode

IDH02SG120 Description

IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode .

IDH02SG120 Features

* Revolutionary semiconductor material - Silicon Carbide
* Switching behavior benchmark
* No reverse recovery / No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant

IDH02SG120 Applications

* Optimized for high temperature operation
* Lowest Figure of Merit QC/IF www. DataSheet4U. net Product Summary V DC QC I F; T C< 130 °C 1200 600 3.2 7.2 3 2 V nC A PG-TO220-2 thinQ!TM 3G Diode designed for fast switching applications like:
* SMPS e. g. ; CCM PFC
* Mot

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